symbol v ds v gs i dm t j , t stg symbol typ max 275 330 360 450 r q jl 300 350 junction and storage temperature range a p d c 0.4 0.24 -55 to 150 t a =70c i d -0.6 -0.4 -3 pulsed drain current b power dissipation a t a =25c continuous drain current a, f maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 8 gate-source voltage drain-source voltage -20 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja AO5803E features v ds (v) = -20v i d = -0.6a (v gs = -4.5v) r ds(on) < 0.8 w (v gs = -4.5v) r ds(on) < 1.0 w (v gs = -2.5v) r ds(on) < 1.25 w (v gs = -1.8v) the AO5803E/l uses advanced trench technology to provide excellent r ds(on) , low gate charge, and operation with gate voltages as low as 1.8v, in the small sc89-6l footprint. it can be used as load switching, and wide variety of fet applications. AO5803E and AO5803El are electrically identical. -rohs compliant -AO5803El is halogen free d2 g2 s2 d1 g1 s1 dual p-channel enhancement mode field general description effect transistor www.freescale.net.cn 1 / 5
symbol min typ max units bv dss -20 v -1 t j =55c -5 i gss 1 m a v gs(th) -0.4 -0.5 -0.9 v i d(on) -3 a 0.62 0.8 t j =125c 0.87 1.1 0.79 1 w 0.96 1.25 w g fs 0.9 s v sd -0.81 -1 v i s -0.5 a c iss 72 100 pf c oss 17 pf c rss 9 pf t d(on) 60.5 ns t r 150 ns t d(off) 612 ns t f 436 ns t rr 27 35 ns q rr 8.3 nc drain-source breakdown voltage i d =-250 m a, v gs =0v v gs =-1.8v, i d =-0.4a v gs =-4.5v, i d =-0.6a on state drain current v gs =-4.5v, v ds =-5v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a gate threshold voltage v ds =v gs i d =-250 m a v ds =-20v, v gs =0v v ds =0v, v gs =4.5v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage w v gs =-2.5v, i d =-0.5a i s =-0.1a,v gs =0v v ds =-5v, i d =-0.6a turn-on rise time turn-off delaytime v gs =-4.5v, v ds =-10v, r l =16.7 w , r gen =3 w turn-off fall time body diode reverse recovery time body diode reverse recovery charge i f =-0.6a, di/dt=100a/ m s, v gs =-9v i f =-0.6a, di/dt=100a/ m s, v gs =-9v maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters switching parameters reverse transfer capacitance v gs =0v, v ds =-10v, f=1mhz a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user' s specific board design. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. rev 4: july 2011 AO5803E dual p-channel enhancement mode field effect transistor www.freescale.net.cn 2 / 5
typical electrical and thermal characteristics 0 1 2 3 4 5 0 1 2 3 4 5 -v ds (volts) figure 1: on-region characteristics -i d (a) -3.5v v gs =-2.0v -3v -6v -10v -4.5v 0 1 2 3 0 1 2 3 4 5 -v gs (volts) figure 2: transfer characteristics -i d (a) -40c 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 0.5 1 1.5 2 2.5 3 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( w w w w ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 0.0 0.4 0.8 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c -40c 6.00e-01 8.00e-01 1.00e+00 1.20e+00 1.40e+00 1.60e+00 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-4.5v id=-0.6a v gs =-1.8v id=-0.4a 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 2 4 6 8 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) ( w w w w ) 25c 125c v ds =-5v v gs =-1.8v v gs =-4.5v i d =-0.6a 25c 125c -4v v gs =-2.5v v gs =-2.5v id=-0.5a -2.5v AO5803E dual p-channel enhancement mode field effect transistor www.freescale.net.cn 3 / 5
typical electrical and thermal characteristics 0 1 2 3 4 5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 20 40 60 80 100 0 5 10 15 20 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 2 4 6 8 10 12 14 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q q q q ja normalized transient thermal resistance c oss c rss 0.00 0.01 0.10 1.00 10.00 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c, t a =25c v ds =-10v i d =-0.6a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =330c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s t on t p d t on p d AO5803E dual p-channel enhancement mode field effect transistor www.freescale.net.cn 4 / 5
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) AO5803E dual p-channel enhancement mode field effect transistor www.freescale.net.cn 5 / 5
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